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PD - 91708B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
Product Summary
Part Number IRHNA7Z60 IRHNA3Z60 IRHNA4Z60 IRHNA8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.009 0.009 0.009 0.009 ID 75*A 75*A 75*A 75*A
IRHNA7Z60 30V, N-CHANNEL
RAD-Hard HEXFET TECHNOLOGY
TM (R)
SMD-2
International Rectifier's RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET(R)
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page *Current is limited by internal wire diameter 75* 75* 300 300 2.4 20 500 75 30 0.35 -55 to 150 300 ( for 5 sec.) 3.3 (Typical )
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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12/18/01
IRHNA7Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 31 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.023 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 7000 4800 1800 -- -- 0.009 4.0 -- 25 250 100 -100 421 104 74 32 370 150 280 -- -- -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 75A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 75A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 15V VDD =15V, ID = 75A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD C iss Coss Crss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
nA
nC
ns
nH
pF
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 75* 300 1.8 245 1.1
Test Conditions
A
V nS C Tj = 25C, IS = 75A, VGS = 0V Tj = 25C, IF = 75A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by the internal wire diameter
Thermal Resistance
Parameter
R thJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- 1.6 0.42 --
C/W
Test Conditions
Soldered to a 1" sq. copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA7Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage
100K Rads(Si)1
300 - 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 12V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=24V, VGS =0V VGS = 12V, ID =15A VGS = 12V, ID =15A VGS = 0V, IS = 75A
Min 30 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.009 0.009 1.8
Min 30 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.03 0.03 1.8
1. Part number IRHNA7Z60 2. Part numbers IRHNA3Z60, IRHNA4Z60 and IRHNA8Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET MeV/(mg/cm)) 36.8 59.9 80.3 Energy (MeV) 305 345 313 Range (m) @VGS=0V Br I AU 39 32.8 26.5 30 25 22.5 @VGS=-5V 30 25 22.5 VDS(V) @VGS=-10V 30 20 15 @VGS=-15V 25 15 10 @VGS=-20V 20 10 _
35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA7Z60
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
5.0V
10 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
10 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
I D , Drain-to-Source Current (A)
1.5
100
1.0
0.5
10 5 6 7 8
V DS = 50V 20s PULSE WIDTH 10 11 9 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNA7Z60
15000
VGS , Gate-to-Source Voltage (V)
12000
VGS = Ciss = C = C Crss = oss oss
C, Capacitance (pF)
Ciss
9000
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 75A
16
VDS = 24V VDS = 15V
12
6000
C rss
8
3000
4
0 1 10 100
0 0 100
FOR TEST CIRCUIT SEE FIGURE 13
200 300 400
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
TJ = 25 C TJ = 150 C
OPERATION IN THIS AREA LIMITED BY R
DS(on)
100
I D , Drain Current (A)
100us
100
10
1ms
1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0 6.0
10
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNA7Z60
Pre-Irradiation
160
LIMITED BY PACKAGE
VGS
120
VDS
RD
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
VGS
80
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
40
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1 0.0001 0.001 0.01
P DM t1 t2 10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA7Z60
1500
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
1200
TOP BOTTOM ID 34A 47A 75A
VD S
L
D R IV E R
900
RG
D .U .T
IA S
+ - VD D
A
VGS 20V
tp
600
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
300
V (B R )D S S tp
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNA7Z60
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L=0.17mH Peak IL = 75A, VGS =12V ISD 75A, di/dt 94A/s, VDD 30V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01
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